Infineon JANSF2N7491T2

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

12

Maximum Drain Source Resistance (mOhm)

45@12V

Typical Gate Charge @ Vgs (nC)

65(Max)@12V

Typical Input Capacitance @ Vds (pF)

2055@25V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

30(Max)

Typical Rise Time (ns)

100(Max)

Typical Turn-Off Delay Time (ns)

35(Max)

Typical Turn-On Delay Time (ns)

25(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

4.54(Max)

PCB changed

3

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Lead Shape

通孔

零件状态

活跃

引脚数量

3

配置

Single

信道型

N

直径

9.22(Max)