Infineon JANSG2N7433

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

35

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

77@12V

Typical Gate Charge @ Vgs (nC)

290(Max)@12V

Typical Input Capacitance @ Vds (pF)

5300@25V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

130(Max)

Typical Rise Time (ns)

200(Max)

Typical Turn-Off Delay Time (ns)

200(Max)

Typical Turn-On Delay Time (ns)

50(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

13.84(Max)

Package Width

6.6(Max)

Package Length

13.84(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-254-AA

Supplier Package

TO-254AA

Lead Shape

通孔

零件状态

活跃

引脚数量

3

配置

Single

信道型

N