Infineon JANSR2N7583U2

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

EU RoHS

供应商未确认

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Maximum Drain Source Voltage (V)

200

Maximum Continuous Drain Current (A)

56

Maximum Power Dissipation (mW)

250000

Mounting

表面贴装

Package Height

3.07(Max)

Package Width

17.65(Max)

Package Length

13.46(Max)

PCB changed

3

Supplier Package

SMD-2

Package Description

CHIP CARRIER, R-CBCC-N3

Package Style

CHIP CARRIER

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Manufacturer Part Number

JANSR2N7583U2

Turn-on Time-Max (ton)

200 ns

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Turn-off Time-Max (toff)

150 ns

Risk Rank

5.76

Drain Current-Max (ID)

56 A

零件状态

活跃

端子位置

BOTTOM

终端形式

无铅

Reach合规守则

compliant

引脚数量

3

参考标准

MIL-19500; RH - 100K Rad(Si)

JESD-30代码

R-CBCC-N3

资历状况

Qualified

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

56 A

漏极-源极导通最大电阻

0.028 Ω

脉冲漏极电流-最大值(IDM)

224 A

DS 击穿电压-最小值

200 V

信道型

N

雪崩能量等级（Eas）

268 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

250 W