Infineon JANTX2N6796

生命周期状态

Production (Last Updated: 2 years ago)

底架

通孔

引脚数

3

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

8

Maximum Drain Source Resistance (MOhm)

195@10V

Typical Gate Charge @ Vgs (nC)

28.5(Max)@10V

Typical Gate Charge @ 10V (nC)

28.5(Max)

Typical Input Capacitance @ Vds (pF)

650@25V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

45(Max)

Typical Rise Time (ns)

75(Max)

Typical Turn-Off Delay Time (ns)

40(Max)

Typical Turn-On Delay Time (ns)

30(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

4.54(Max)

PCB changed

3

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Lead Shape

通孔

Number of Elements

1

RoHS

Compliant

包装

Bulk

零件状态

活跃

最高工作温度

150 °C

最小工作温度

-55 °C

引脚数量

3

配置

Single

功率耗散

25 W

漏源电压 (Vdss)

100 V

连续放电电流(ID)

5 A

栅极至源极电压(Vgs)

20 V

漏源击穿电压

100 V

信道型

N

漏源电阻

180 mΩ

通态电阻

200 mΩ

直径

9.22(Max)

辐射硬化

无

无铅

含铅