Infineon JANTX2N6800

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

400

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

3

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

1100@10V

Typical Gate Charge @ Vgs (nC)

33(Max)@10V

Typical Gate Charge @ 10V (nC)

33(Max)

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

35(Max)

Typical Rise Time (ns)

35(Max)

Typical Turn-Off Delay Time (ns)

55(Max)

Typical Turn-On Delay Time (ns)

30(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

4.54(Max)

PCB changed

3

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Lead Shape

通孔

Package Description

CYLINDRICAL, O-MBCY-W3

Package Style

CYLINDRICAL

Package Body Material

METAL

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

JANTX2N6800

Package Shape

ROUND

Manufacturer

Microsemi Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

7.65

Drain Current-Max (ID)

3 A

JESD-609代码

e0

零件状态

活跃

端子表面处理

Tin/Lead (Sn/Pb)

附加功能

HIGH RELIABILITY

HTS代码

8541.21.00.95

子类别

FET 通用电源

端子位置

BOTTOM

终端形式

WIRE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

not_compliant

引脚数量

3

参考标准

MIL-19500

JESD-30代码

O-MBCY-W3

资历状况

Qualified

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-205AF

最大漏极电流 (Abs) (ID)

3 A

漏极-源极导通最大电阻

1.1 Ω

脉冲漏极电流-最大值(IDM)

14 A

DS 击穿电压-最小值

400 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

25 W

直径

9.22(Max)