Infineon JANTX2N6800U

表面安装

YES

终端数量

15

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.21.00.75

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

400

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3

Maximum Drain Source Resistance (MOhm)

1150@10V

Typical Gate Charge @ Vgs (nC)

33(Max)@10V

Typical Gate Charge @ 10V (nC)

33(Max)

Typical Input Capacitance @ Vds (pF)

660@25V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

35(Max)

Typical Rise Time (ns)

35(Max)

Typical Turn-Off Delay Time (ns)

55(Max)

Typical Turn-On Delay Time (ns)

30(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

表面贴装

Package Height

3.22(Max)

Package Width

7.49(Max)

Package Length

9.14(Max)

PCB changed

18

Standard Package Name

LLCC

Supplier Package

LLCC

Lead Shape

No Lead

Package Description

CHIP CARRIER, R-CQCC-N15

Package Style

CHIP CARRIER

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

JANTX2N6800U

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.16

Drain Current-Max (ID)

3 A

JESD-609代码

e0

零件状态

活跃

端子表面处理

Tin/Lead (Sn/Pb)

附加功能

雪崩 额定

子类别

FET 通用电源

端子位置

QUAD

终端形式

无铅

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

18

参考标准

MIL-19500/557

JESD-30代码

R-CQCC-N15

资历状况

Qualified

配置

单六进制漏八进制源双门

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

3 A

漏极-源极导通最大电阻

1.15 Ω

脉冲漏极电流-最大值(IDM)

12 A

DS 击穿电压-最小值

400 V

信道型

N

雪崩能量等级（Eas）

0.51 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

25 W