Infineon JANTX2N6804

表面安装

NO

终端数量

2

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

11

Maximum Drain Source Resistance (MOhm)

360@10V

Typical Gate Charge @ Vgs (nC)

29(Max)@10V

Typical Gate Charge @ 10V (nC)

29(Max)

Typical Input Capacitance @ Vds (pF)

860@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

140(Max)

Typical Rise Time (ns)

140(Max)

Typical Turn-Off Delay Time (ns)

140(Max)

Typical Turn-On Delay Time (ns)

60(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

7.74(Max)

Package Width

25.53(Max)

Package Length

39.37(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-204-AA

Supplier Package

TO-204AE

Lead Shape

通孔

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Reflow Temperature-Max (s)

未说明

Rohs Code

无

Manufacturer Part Number

JANTX2N6804

Package Shape

ROUND

Manufacturer

Microsemi Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

7.12

Part Package Code

TO-3

Drain Current-Max (ID)

11 A

JESD-609代码

e0

无铅代码

无

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

附加功能

雪崩 额定

HTS代码

8541.29.00.95

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

参考标准

MIL-19500

JESD-30代码

O-MBFM-P2

资历状况

Qualified

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

JEDEC-95代码

TO-204AA

漏极-源极导通最大电阻

0.36 Ω

脉冲漏极电流-最大值(IDM)

50 A

DS 击穿电压-最小值

100 V

信道型

P

雪崩能量等级（Eas）

81 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR