Infineon JANTX2N6849

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

6.5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

320@10V

Typical Gate Charge @ Vgs (nC)

34.8(Max)@10V

Typical Gate Charge @ 10V (nC)

34.8(Max)

Typical Gate to Drain Charge (nC)

23.1(Max)

Typical Gate to Source Charge (nC)

6.8(Max)

Typical Input Capacitance @ Vds (pF)

800@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

125@25V

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

350

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

140(Max)

Typical Rise Time (ns)

140(Max)

Typical Turn-Off Delay Time (ns)

140(Max)

Typical Turn-On Delay Time (ns)

60(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

25

Maximum Diode Forward Voltage (V)

4.3

Mounting

通孔

Package Height

4.54(Max)

PCB changed

3

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Lead Shape

通孔

Package Description

CYLINDRICAL, O-MBCY-W3

Package Style

CYLINDRICAL

Package Body Material

METAL

Manufacturer Part Number

JANTX2N6849

Package Shape

ROUND

Manufacturer

Defense Logistics Agency

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

DEFENSE LOGISTICS AGENCY

Risk Rank

5.17

Drain Current-Max (ID)

6.5 A

零件状态

活跃

ECCN 代码

EAR99

附加功能

辐射硬化

端子位置

BOTTOM

终端形式

WIRE

Reach合规守则

unknown

引脚数量

3

参考标准

MILITARY STANDARD (USA)

JESD-30代码

O-MBCY-W3

资历状况

Qualified

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

JEDEC-95代码

TO-205AF

漏极-源极导通最大电阻

0.3 Ω

脉冲漏极电流-最大值(IDM)

25 A

DS 击穿电压-最小值

100 V

信道型

P

雪崩能量等级（Eas）

500 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

直径

9.22(Max)