Infineon JANTX2N6849U

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

6.5

Maximum Drain Source Resistance (MOhm)

345@10V

Typical Gate Charge @ Vgs (nC)

35(Max)@10V

Typical Gate Charge @ 10V (nC)

35(Max)

Typical Input Capacitance @ Vds (pF)

790@25V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

140(Max)

Typical Rise Time (ns)

140(Max)

Typical Turn-Off Delay Time (ns)

140(Max)

Typical Turn-On Delay Time (ns)

60(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

表面贴装

Package Height

3.22(Max)

Package Width

7.49(Max)

Package Length

9.14(Max)

PCB changed

18

Standard Package Name

LLCC

Supplier Package

LLCC

Lead Shape

No Lead

Package Description

CHIP CARRIER, R-CQCC-N15

Rohs Code

无

Manufacturer Part Number

JANTX2N6849U

Manufacturer

Infineon Technologies AG

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.21

零件状态

活跃

ECCN 代码

EAR99

Reach合规守则

unknown

引脚数量

18

配置

单六进制漏八进制源双门

信道型

P