Infineon JANTXVR2N7473U2

材料

Si

ECCN (US)

出口接触方式

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

53.5

Maximum Drain Source Resistance (MOhm)

38@12V

Typical Gate Charge @ Vgs (nC)

155(Max)

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

50(Max)

Typical Rise Time (ns)

125(Max)

Typical Turn-Off Delay Time (ns)

80(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

零件状态

活跃

配置

Single

信道型

N