OM3N100ST详情
Infineon OM3N100ST重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
不合规
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
1000
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
3.5
Maximum Drain Source Resistance (MOhm)
5200@10V
Typical Input Capacitance @ Vds (pF)
950@25V
Maximum Power Dissipation (mW)
90000
Typical Fall Time (ns)
75
Typical Rise Time (ns)
90
Typical Turn-Off Delay Time (ns)
115
Typical Turn-On Delay Time (ns)
90
Minimum Operating Temperature (°C)
-55
Supplier Package
TO-257AA
Tab
Tab
PCB changed
3
Package Length
10.66(Max)
Package Width
5.08(Max)
Package Height
10.92(Max)
Mounting
通孔
Maximum Operating Temperature (°C)
150
零件状态
Obsolete
引脚数量
3
配置
Single
信道型
N
OM3N100ST拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。