SN7002WL6327XT详情
Infineon SN7002WL6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
表面贴装
引脚数
3
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
有
PPAP
Unknown
Category
小信号
Process Technology
SIPMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1.8
Maximum Continuous Drain Current (A)
0.23
Maximum Gate Source Leakage Current (nA)
10
Maximum IDSS (uA)
0.1
Maximum Drain Source Resistance (mOhm)
5000@10V
Typical Gate Charge @ Vgs (nC)
1@10V
Typical Gate Charge @ 10V (nC)
1
Typical Gate to Drain Charge (nC)
0.42
Typical Gate to Source Charge (nC)
0.11
Typical Reverse Recovery Charge (nC)
3.2
Typical Input Capacitance @ Vds (pF)
34@25V
Typical Output Capacitance (pF)
7.2
Maximum Power Dissipation (mW)
500
Typical Fall Time (ns)
8.5
Typical Rise Time (ns)
2.8
Typical Turn-Off Delay Time (ns)
6
Typical Turn-On Delay Time (ns)
2.4
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
0.9(Max)
Package Width
1.25
Package Length
2
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-323
Lead Shape
Gull-wing
Number of Elements
1
RoHS
Compliant
包装
卷带
零件状态
Obsolete
最高工作温度
150 °C
最小工作温度
-55 °C
引脚数量
3
配置
Single
功率耗散
500 mW
连续放电电流(ID)
230 mA
栅极至源极电压(Vgs)
20 V
信道型
N
辐射硬化
无
SN7002WL6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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