Infineon SP000307379

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Category

功率MOSFET

Process Technology

CoolMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

3.5

Maximum Continuous Drain Current (A)

9

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

399@10V

Typical Gate Charge @ Vgs (nC)

17@10V

Typical Gate Charge @ 10V (nC)

17

Typical Input Capacitance @ Vds (pF)

890@100V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

14

Typical Rise Time (ns)

14

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

35

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

Obsolete

配置

Single

信道型

N