Infineon SP000313946

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Category

功率MOSFET

Process Technology

CoolMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

4.5

Maximum Drain Source Resistance (mOhm)

950@10V

Typical Gate Charge @ Vgs (nC)

17.6@10V

Typical Gate Charge @ 10V (nC)

17.6

Typical Input Capacitance @ Vds (pF)

580@25V

Maximum Power Dissipation (mW)

50000

Typical Fall Time (ns)

15

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

60

Typical Turn-On Delay Time (ns)

55

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

Obsolete

配置

Single

信道型

N