Infineon SP000748518

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

CoolMOS C6

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

3.5

Maximum Continuous Drain Current (A)

10.6

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

380@10V

Typical Gate Charge @ Vgs (nC)

32@10V

Typical Gate Charge @ 10V (nC)

32

Typical Input Capacitance @ Vds (pF)

700@100V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

9

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

110

Typical Turn-On Delay Time (ns)

15

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.41(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N