Infineon SP001075902

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Category

功率MOSFET

Process Technology

OptiMOS 5

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

25

Maximum Gate Source Voltage (V)

±16

Maximum Gate Threshold Voltage (V)

2

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

31@Q 1|50@Q 2

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

3@10V@Q 1|0.8@10V@Q 2

Typical Gate Charge @ Vgs (nC)

[email protected]@Q 1|[email protected]@Q 2

Typical Gate to Drain Charge (nC)

1.4@Q 1|4.7@Q 2

Typical Gate to Source Charge (nC)

2@Q 1|6.4@Q 2

Typical Reverse Recovery Charge (nC)

10@Q 1|20@Q 2

Typical Input Capacitance @ Vds (pF)

780@12V@Q 1|2700@12V@Q 2

Typical Reverse Transfer Capacitance @ Vds (pF)

38@12V@Q 1|130@12V@Q 2

Minimum Gate Threshold Voltage (V)

1.2

Typical Output Capacitance (pF)

390@Q 1|1400@Q 2

Maximum Power Dissipation (mW)

6250

Typical Fall Time (ns)

1.4@Q 1|2.6@Q 2

Typical Rise Time (ns)

4.7@Q 1|4.3@Q 2

Typical Turn-Off Delay Time (ns)

4.3@Q 1|8.8@Q 2

Typical Turn-On Delay Time (ns)

4.3@Q 1|5.6@Q 2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation on PCB @ TC=25°C (W)

6.25

Maximum Pulsed Drain Current @ TC=25°C (A)

160

Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

50

Typical Diode Forward Voltage (V)

0.84@Q 1|0.77@Q 2

Typical Gate Plateau Voltage (V)

2.6@Q 1|2.3@Q 2

Maximum Diode Forward Voltage (V)

1

Typical Gate Threshold Voltage (V)

1.6

Maximum Gate Resistance (Ohm)

1.2

Maximum Positive Gate Source Voltage (V)

16

包装

卷带

零件状态

活跃

配置

Dual

信道型

N