SPB100N06S205NT详情
Infineon SPB100N06S205NT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
不合规
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
OptiMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
55
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
100
Maximum Drain Source Resistance (mOhm)
5@10V
Typical Gate Charge @ Vgs (nC)
130@10V
Typical Gate Charge @ 10V (nC)
130
Typical Input Capacitance @ Vds (pF)
5110@25V
Maximum Power Dissipation (mW)
300000
Typical Fall Time (ns)
30
Typical Rise Time (ns)
31
Typical Turn-Off Delay Time (ns)
59
Lead Shape
Gull-wing
Supplier Package
D2PAK
Standard Package Name
TO-263
Tab
Tab
PCB changed
2
Package Length
10
Package Width
9.25
Package Height
4.4
Mounting
表面贴装
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Typical Turn-On Delay Time (ns)
21
零件状态
Obsolete
引脚数量
3
配置
Single
信道型
N
SPB100N06S205NT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。