Infineon SPD30N06S2L13NT

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

30

Maximum Drain Source Resistance (MOhm)

13@10V

Typical Gate Charge @ Vgs (nC)

52@10V

Typical Gate Charge @ 10V (nC)

52

Typical Input Capacitance @ Vds (pF)

1725@25V

Maximum Power Dissipation (mW)

136000

Typical Fall Time (ns)

13

Typical Rise Time (ns)

14

Typical Turn-Off Delay Time (ns)

8

Typical Turn-On Delay Time (ns)

7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.3

Package Width

6.22

Package Length

6.5

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N