Infineon SPD30P06PZT

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

30

Maximum Drain Source Resistance (MOhm)

75@10V

Typical Gate Charge @ Vgs (nC)

32@10V

Typical Gate Charge @ 10V (nC)

32

Typical Input Capacitance @ Vds (pF)

1228@25V

Maximum Power Dissipation (mW)

125000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

11

Typical Turn-Off Delay Time (ns)

30

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.3

Package Width

6.22

Package Length

6.5

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

包装

卷带

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

P