Infineon SPD35N10T

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

35

Maximum Drain Source Resistance (MOhm)

44@10V

Typical Gate Charge @ Vgs (nC)

49@10V

Typical Gate Charge @ 10V (nC)

49

Typical Input Capacitance @ Vds (pF)

1180@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

23

Typical Rise Time (ns)

63

Typical Turn-Off Delay Time (ns)

39

Typical Turn-On Delay Time (ns)

12.2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

零件状态

Obsolete

配置

Single

信道型

N