SPD50N03S2L06XT详情
Infineon SPD50N03S2L06XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
OptiMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
50
Maximum Drain Source Resistance (MOhm)
6.4@10V
Typical Gate Charge @ Vgs (nC)
52@10V
Typical Gate Charge @ 10V (nC)
52
Typical Input Capacitance @ Vds (pF)
1900@25V
Maximum Power Dissipation (mW)
136000
Typical Fall Time (ns)
24
Typical Rise Time (ns)
19
Typical Turn-Off Delay Time (ns)
35
Typical Turn-On Delay Time (ns)
8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
表面贴装
Package Height
2.3
Package Width
6.22
Package Length
6.5
PCB changed
2
Tab
Tab
Standard Package Name
TO-252
Supplier Package
DPAK
包装
卷带
零件状态
Obsolete
引脚数量
3
配置
Single
信道型
N
SPD50N03S2L06XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。