SPN04N60S5XT详情
Infineon SPN04N60S5XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
CoolMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
600
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
0.8
Maximum Drain Source Resistance (MOhm)
950@10V
Typical Gate Charge @ Vgs (nC)
17@10V
Typical Gate Charge @ 10V (nC)
17
Typical Input Capacitance @ Vds (pF)
600@25V
Maximum Power Dissipation (mW)
1800
Typical Fall Time (ns)
30
Typical Rise Time (ns)
20
Typical Turn-Off Delay Time (ns)
130
Typical Turn-On Delay Time (ns)
40
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1.6
Package Width
3.5
Package Length
6.5
PCB changed
3
Tab
Tab
Standard Package Name
SOT
Supplier Package
SOT-223
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
引脚数量
4
配置
单排双泄
信道型
N
SPN04N60S5XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。