Infineon SPP11N65C3HKSA1

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

CoolMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

11

Maximum Drain Source Resistance (MOhm)

380@10V

Typical Gate Charge @ Vgs (nC)

45@10V

Typical Gate Charge @ 10V (nC)

45

Typical Input Capacitance @ Vds (pF)

1200@25V

Maximum Power Dissipation (mW)

125000

Typical Fall Time (ns)

5

Typical Rise Time (ns)

5

Typical Turn-Off Delay Time (ns)

44

Typical Turn-On Delay Time (ns)

10

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.25

Package Width

4.4

Package Length

10

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Lead Shape

通孔

Package

Tube

Base Product Number

SPP11N65

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

厂商

Infineon Technologies

Product Status

活跃

包装

Tube

系列

CoolMOS™

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N