Infineon SPP18P06PXK

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

18.7

Maximum Drain Source Resistance (mOhm)

130@10V

EU RoHS

Compliant

ECCN (US)

EAR99

Typical Gate Charge @ Vgs (nC)

21@10V

Typical Gate Charge @ 10V (nC)

21

Typical Gate to Drain Charge (nC)

11

Typical Gate to Source Charge (nC)

4.1

Typical Reverse Recovery Charge (nC)

139

Typical Input Capacitance @ Vds (pF)

690@25V

Typical Output Capacitance (pF)

230

Maximum Power Dissipation (mW)

81100

Typical Fall Time (ns)

11

Typical Rise Time (ns)

5.8

Typical Turn-Off Delay Time (ns)

25

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.45(Max)

Package Width

4.57(Max)

Package Length

10.36(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

包装

Tube

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

P