Infineon SPW47N60C3CKSA1

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

CoolMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

47

Maximum Drain Source Resistance (MOhm)

70@10V

Typical Gate Charge @ Vgs (nC)

252@10V

Typical Gate Charge @ 10V (nC)

252

Typical Input Capacitance @ Vds (pF)

6800@25V

Maximum Power Dissipation (mW)

415000

Typical Fall Time (ns)

8

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

111

Typical Turn-On Delay Time (ns)

18

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

20.95

Package Width

5.3

Package Length

15.9

PCB changed

3

Tab

Tab

Standard Package Name

TO-247

Supplier Package

TO-247

Lead Shape

通孔

包装

Tube

引脚数量

3

配置

Single

信道型

N