Infineon Technologies AUIRFN8458TRXTMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-PQFN (5x6)

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

不用于新设计

Current - Continuous Drain (Id) @ 25℃

43A (Tc)

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

9.7 ns

Vgs th - Gate-Source Threshold Voltage

3.9 V

Pd - Power Dissipation

180 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

56 S

Part # Aliases

AUIRFN8458TR SP001784378

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

22 nC

Rds On - Drain-Source Resistance

8 mOhms

Typical Turn-Off Delay Time

11 ns

Id - Continuous Drain Current

43 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

Reel

子类别

MOSFETs

技术

Si

通道数量

2 Channel

功率 - 最大

34W (Tc)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

10mOhm @ 26A, 10V

不同 Id 时 Vgs(th)（最大值）

3.9V @ 25μA

输入电容(Ciss)(Max)@Vds

2250pF @ 25V

门极电荷(Qg)(最大)@Vgs

33nC @ 10V

上升时间

71 ns

漏源电压 (Vdss)

40V

产品类别

MOSFET

晶体管类型

2 N-Channel

信道型

Dual N

场效应管特性

Standard

产品类别

MOSFET