Infineon Technologies BSM75GB120DN2_E3223C-SE
- 收藏
- 对比
BSM75GB120DN2_E3223C-SE
1211-BSM75GB120DN2_E3223C-SE
晶体管 - IGBT - 模块
--
大陆
立即发货

IGBT MODULE
1最小包装量--
BSM75GB120DN2_E3223C-SE详情
Infineon Technologies BSM75GB120DN2_E3223C-SE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
厂商
Infineon Technologies
Package
Bulk
Product Status
活跃
Pd - Power Dissipation
625 W
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
2.5 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
10
Continuous Collector Current at 25 C
105 A
Part # Aliases
SP000100719
Manufacturer
Infineon
Brand
Infineon Technologies
Collector- Emitter Voltage VCEO Max
1200 V
系列
*
子类别
IGBTs
配置
半桥
产品类别
IGBT模块
连续集电极电流
105
产品
IGBT硅模块
产品类别
IGBT模块
BSM75GB120DN2_E3223C-SE拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。