Infineon Technologies BSO615NGXUMA1

工厂交货时间

26 Weeks

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

PG-DSO-8

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.6A

Base Product Number

BSO615

MSL

MSL 3 - 168 hours

Qualification

-

Transistor Polarity

N通道

Continuous Drain Current Id

2.6A

Vds - Drain-Source Breakdown Voltage

60 V

Moisture Sensitive

有

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

1.6 V

Pd - Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.026455 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

2.4 S

Channel Mode

Enhancement

Part # Aliases

BSO615N G SP005353857

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

14 nC

Rds On - Drain-Source Resistance

120 mOhms

RoHS

Details

Typical Turn-Off Delay Time

20 ns

Id - Continuous Drain Current

2.6 A, 2.6 A

Package Description

,

Moisture Sensitivity Levels

3

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BSO615NGXUMA1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

1.63

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

150mOhm @ 2.6A, 4.5V

不同 Id 时 Vgs(th)（最大值）

2V @ 20μA

输入电容(Ciss)(Max)@Vds

380pF @ 25V

门极电荷(Qg)(最大)@Vgs

20nC @ 10V

上升时间

15 ns

漏源电压 (Vdss)

60V

产品类别

MOSFET

晶体管类型

2 N-Channel

信道型

N通道

场效应管特性

逻辑电平门

产品类别

MOSFET