Infineon Technologies DF200R07W2H3B77BPSA1
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DF200R07W2H3B77BPSA1
1211-DF200R07W2H3B77BPSA1
晶体管 - IGBT - 模块
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LOW POWER EASY AG-EASY2B-411
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DF200R07W2H3B77BPSA1详情
Infineon Technologies DF200R07W2H3B77BPSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
厂商
Infineon Technologies
Package
Tray
Product Status
活跃
Maximum Gate Emitter Voltage
±20V
Maximum Collector Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.46V
Pd - Power Dissipation
-
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
15
Continuous Collector Current at 25 C
100 A
Part # Aliases
DF200R07W2H3_B77 SP005423521
Manufacturer
Infineon
Brand
Infineon Technologies
Collector- Emitter Voltage VCEO Max
650 V
系列
*
包装
Tray
子类别
IGBTs
配置
3-Phase Inverter
功率耗散
-
产品类别
IGBT模块
连续集电极电流
200A
产品
IGBT硅模块
产品类别
IGBT模块
DF200R07W2H3B77BPSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







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