Infineon Technologies FF900R12ME7WB11BPSA1
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FF900R12ME7WB11BPSA1
1211-FF900R12ME7WB11BPSA1
晶体管 - IGBT - 模块
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FF900R12ME7WB11BPSA1详情
Infineon Technologies FF900R12ME7WB11BPSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
厂商
Infineon Technologies
Package
Tray
Product Status
活跃
Maximum Gate Emitter Voltage
20V
Maximum Collector Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.5V
Pd - Power Dissipation
-
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
6
Continuous Collector Current at 25 C
890 A
Part # Aliases
FF900R12ME7W_B11 SP005589481
Manufacturer
Infineon
Brand
Infineon Technologies
Collector- Emitter Voltage VCEO Max
1200 V
系列
*
包装
Tray
子类别
IGBTs
配置
Dual
功率耗散
-
产品类别
IGBT模块
连续集电极电流
890A
产品
IGBT硅模块
产品类别
IGBT模块
FF900R12ME7WB11BPSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







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