Infineon Technologies FP200R12N3T7BPSA1
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FP200R12N3T7BPSA1
1211-FP200R12N3T7BPSA1
晶体管 - IGBT - 模块
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LOW POWER ECONO AG-ECONO3-3
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FP200R12N3T7BPSA1详情
Infineon Technologies FP200R12N3T7BPSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
厂商
Infineon Technologies
Package
Tray
Product Status
活跃
Base Product Number
FP200R12
Collector-Emitter Saturation Voltage
1.55
Maximum Gate Emitter Voltage
±20V
Package Type
Module
Maximum Collector Emitter Voltage
1200 V
Pd - Power Dissipation
-
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
10
Continuous Collector Current at 25 C
200 A
Part # Aliases
FP200R12N3T7 SP005337548
Manufacturer
Infineon
Brand
Infineon Technologies
Collector- Emitter Voltage VCEO Max
1200 V
系列
*
包装
Tray
子类别
IGBTs
引脚数量
46
配置
3 Phase
功率耗散
-
产品类别
IGBT模块
信道型
N
连续集电极电流
200
产品
IGBT硅模块
产品类别
IGBT模块
FP200R12N3T7BPSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
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