Infineon Technologies FS03MR12A6MA1BBPSA1
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FS03MR12A6MA1BBPSA1
1211-FS03MR12A6MA1BBPSA1
晶体管 - FET,MOSFET - 阵列
Module
大陆
立即发货

HYBRID PACK DRIVE SIC AG-HYBRIDD
1最小包装量--
FS03MR12A6MA1BBPSA1详情
Infineon Technologies FS03MR12A6MA1BBPSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
Module
供应商器件包装
AG-HYBRIDD-2
厂商
Infineon Technologies
Package
Tray
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
400A (Tj)
Package Type
AG-HYBRIDD-2
Continuous Drain Current Id
400A
Factory Pack QuantityFactory Pack Quantity
6
Part # Aliases
FS03MR12A6MA1B SP001720764
Manufacturer
Infineon
Brand
Infineon Technologies
操作温度
-40°C ~ 150°C (TJ)
包装
Tray
子类别
Discrete Semiconductor Modules
技术
SiC
功率耗散
-
功率 - 最大
20mW
场效应管类型
6 N-Channel (3-Phase Bridge)
Rds On(Max)@Id,Vgs
3.7mOhm @ 400A, 15V
不同 Id 时 Vgs(th)(最大值)
5.55V @ 240mA
输入电容(Ciss)(Max)@Vds
42500pF @ 600V
门极电荷(Qg)(最大)@Vgs
1320nC @ 15V
漏源电压 (Vdss)
1200V (1.2kV)
产品类别
Discrete Semiconductor Modules
信道型
N, P
场效应管特性
Silicon Carbide (SiC)
产品类别
Discrete Semiconductor Modules
FS03MR12A6MA1BBPSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







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