Infineon Technologies IAUC60N04S6L045HATMA1

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

PG-TDSON-8-57

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

60A (Tj)

Base Product Number

IAUC60

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Transistor Polarity

N通道

Continuous Drain Current Id

60A

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

2 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

52 W

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IAUC60N04S6L045H SP004134514

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

14 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

4.5 mOhms

Typical Turn-Off Delay Time

9 ns

Id - Continuous Drain Current

80 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

通道数量

1 Channel

功率 - 最大

52W (Tc)

场效应管类型

2 N-Channel (Half Bridge)

Rds On(Max)@Id,Vgs

4.5mOhm @ 30A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 13μA

输入电容(Ciss)(Max)@Vds

1136pF @ 25V

门极电荷(Qg)(最大)@Vgs

19nC @ 10V

上升时间

1 ns

漏源电压 (Vdss)

40V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

逻辑电平门

产品类别

MOSFET