Infineon Technologies IAUC60N04S6N031HATMA1

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

PG-TDSON-8-56

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

60A (Tj)

Base Product Number

IAUC60

Package Type

SuperSO8 5 x 6

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Transistor Polarity

N通道

Continuous Drain Current Id

60A

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

5 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

75 W

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IAUC60N04S6N031H SP003863382

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

23 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

3.1 mOhms

Typical Turn-Off Delay Time

10 ns

Id - Continuous Drain Current

113 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

1 Channel

功率 - 最大

75W (Tc)

场效应管类型

2 N-Channel (Half Bridge)

Rds On(Max)@Id,Vgs

3.1mOhm @ 30A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 25μA

输入电容(Ciss)(Max)@Vds

1922pF @ 25V

门极电荷(Qg)(最大)@Vgs

30nC @ 10V

上升时间

2 ns

漏源电压 (Vdss)

40V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

Standard

产品类别

MOSFET