Infineon Technologies IPG20N04S418AATMA1

安装类型

Surface Mount, Wettable Flank

包装/外壳

8-PowerVDFN

供应商器件包装

PG-TDSON-8-10

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

20A (Tc)

Base Product Number

IPG20N

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

26 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPG20N04S4-18A SP003127446

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

8.7 nC

Rds On - Drain-Source Resistance

18 mOhms

RoHS

Details

Id - Continuous Drain Current

20 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

通道数量

2 Channel

功率 - 最大

26W (Tc)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

18.4mOhm @ 17A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 8μA

输入电容(Ciss)(Max)@Vds

25V

门极电荷(Qg)(最大)@Vgs

15nC @ 10V

漏源电压 (Vdss)

40V

产品类别

MOSFET

场效应管特性

Standard

产品类别

MOSFET