Infineon Technologies IPP026N10NF2SAKMA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3

Continuous Drain Current Id

184

Number of Elements per Chip

1

Package Type

TO-220

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPP026N10NF2S SP005548847

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

103 nC

Rds On - Drain-Source Resistance

2.6 mOhms

Id - Continuous Drain Current

184 A

Package

Tube

Base Product Number

IPP026N

Current - Continuous Drain (Id) @ 25℃

27A (Ta), 184A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

3.8W (Ta), 250W (Tc)

Product Status

活跃

系列

IPP026N10NF2S

包装

Tube

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

3

通道数量

1 Channel

功率耗散

250

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.6mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

3.8V @ 169µA

输入电容(Ciss)(Max)@Vds

7300 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

154 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET