Infineon Technologies IRFI4212H-117PXKMA1

安装类型

通孔

包装/外壳

TO-220-5 Full Pack, Formed Leads

供应商器件包装

TO-220-5 Full-Pak

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

Base Product Number

IRFI4212

Qualification

-

Transistor Polarity

N通道

Continuous Drain Current Id

11A

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

18 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IRFI4212H-117P SP005547285

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

12 nC

Rds On - Drain-Source Resistance

72.5 mOhms

Id - Continuous Drain Current

11 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

技术

Si

通道数量

2 Channel

功率 - 最大

18W (Tc)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

72.5mOhm @ 6.6A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 250μA

输入电容(Ciss)(Max)@Vds

490pF @ 50V

门极电荷(Qg)(最大)@Vgs

18nC @ 10V

漏源电压 (Vdss)

100V

产品类别

MOSFET

信道型

N通道

场效应管特性

Standard

产品类别

MOSFET