Infineon Technologies SPU04N60C3

包装/外壳

TO-251-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

50 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000095850 SPU4N6C3XK SPU04N60C3BKMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

19 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

950 mOhms

RoHS

Details

Typical Turn-Off Delay Time

58.5 ns

Id - Continuous Drain Current

4.5 A

系列

CoolMOS C3

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

2.5 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

2.38 mm

高度

6.22 mm

长度

6.73 mm