Infineon Technologies AG DF160R12W2H3F_B11

包装/外壳

Module

ECCN (US)

EAR99

Typical Collector Emitter Saturation Voltage (V)

1.55

Maximum Collector-Emitter Voltage (V)

1200

Maximum Power Dissipation (mW)

190000

Maximum Gate Emitter Voltage (V)

±20

Maximum Continuous Collector Current (A)

20

Maximum Gate Emitter Leakage Current (uA)

0.1

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

AEC Qualified

无

Supplier Package

EASY2B-2

Military

无

Mounting

Screw

Package Height

12

Package Length

62.8

Package Width

56.7

PCB changed

25

Manufacturer Part Number

DF160R12W2H3F_B11

Approvals

UL

Manufacturer

Infineon

Maximum Gate Emitter Voltage

20 V

Pd - Power Dissipation

20 mW

Maximum Operating Temperature

+ 150 C

Collector-Emitter Saturation Voltage

1.55 V

Unit Weight

1.269863 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

15

Continuous Collector Current at 25 C

20 A

Mounting Styles

压装

Part # Aliases

SP001602670 DF160R12W2H3FB11BPSA1

Brand

Infineon Technologies

Tradename

EasyPACK CoolSiC

RoHS

Details

Collector- Emitter Voltage VCEO Max

1200 V

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

1.26

包装

Tray

系列

High Speed IGBT H3

无铅代码

无

零件状态

活跃

类型

Quad-Pack

子类别

IGBTs

技术

SiC

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

25

配置

Quad

电路型态

Chopper

产品类别

IGBT模块

信道型

N

产品

IGBT碳化硅模块

产品类别

IGBT模块

高度(毫米)

12 mm

RoHS状态

是,有豁免