Infineon Technologies AG FD800R17HP4KB2BOSA1
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FD800R17HP4KB2BOSA1
1211-FD800R17HP4KB2BOSA1
晶体管 - IGBT - 模块
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大陆
立即发货

Trans IGBT Module N-CH 1700V 800A 5350000mW 7-Pin Tray
1最小包装量--
FD800R17HP4KB2BOSA1详情
Infineon Technologies AG FD800R17HP4KB2BOSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1700
Typical Collector Emitter Saturation Voltage (V)
1.9
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
5350000
Maximum Continuous Collector Current (A)
800
Maximum Gate Emitter Leakage Current (uA)
0.4
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Automotive
无
Military
无
Mounting
Screw
Package Length
140
Package Width
130
PCB changed
7
包装
Tray
零件状态
Unconfirmed
引脚数量
7
配置
Single
信道型
N
RoHS状态
是,有豁免
FD800R17HP4KB2BOSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。