Infineon Technologies AG FF400R17KF6CB2NOSA1
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FF400R17KF6CB2NOSA1
1211-FF400R17KF6CB2NOSA1
晶体管 - IGBT - 模块
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Trans IGBT Module N-CH 1700V 650A 3300000mW 10-Pin IHM130-1 Tray
1最小包装量--
FF400R17KF6CB2NOSA1详情
Infineon Technologies AG FF400R17KF6CB2NOSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1700
Typical Collector Emitter Saturation Voltage (V)
2.6
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
3300000
Maximum Continuous Collector Current (A)
650
Maximum Gate Emitter Leakage Current (uA)
0.4
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Automotive
无
Supplier Package
IHM130-1
Military
无
Mounting
Screw
Package Height
38
Package Length
140
Package Width
130
PCB changed
10
包装
Tray
零件状态
Obsolete
引脚数量
10
配置
Dual
信道型
N
RoHS状态
RoHS non-compliant
FF400R17KF6CB2NOSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。