Infineon Technologies AG FF800R12KF4NOSA1
- 收藏
- 对比
FF800R12KF4NOSA1
1211-FF800R12KF4NOSA1
晶体管 - IGBT - 模块
--
大陆
立即发货

Trans IGBT Module N-CH 1200V 800A 5000000mW 10-Pin IHM130-2 Tray
1最小包装量--
FF800R12KF4NOSA1详情
Infineon Technologies AG FF800R12KF4NOSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Automotive
无
Supplier Package
IHM130-2
Military
无
Mounting
Screw
Package Height
38
Package Length
140
Package Width
130
PCB changed
10
Maximum Continuous Collector Current (A)
800
Maximum Power Dissipation (mW)
5000000
Maximum Gate Emitter Voltage (V)
±20
Typical Collector Emitter Saturation Voltage (V)
2.7
Maximum Collector-Emitter Voltage (V)
1200
ECCN (US)
EAR99
Maximum Gate Emitter Leakage Current (uA)
0.4
包装
Tray
零件状态
Obsolete
引脚数量
10
配置
Dual
信道型
N
RoHS状态
RoHS non-compliant
FF800R12KF4NOSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。