Integrated Device Technology IDT6116SA20TPGI
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IDT6116SA20TPGI
1179-IDT6116SA20TPGI
连接器,连接线
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大陆
立即发货

Standard SRAM, 2KX8, 19ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24
1最小包装量--
IDT6116SA20TPGI详情
Integrated Device Technology IDT6116SA20TPGI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
24
Part Package Code
DIP
Risk Rank
5.4
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Life Cycle Code
活跃
Manufacturer
Integrated Device Technology Inc
Package Shape
RECTANGULAR
Package Code
DIP
Supply Voltage-Nom (Vsup)
5 V
Number of Words
2048 words
Manufacturer Part Number
IDT6116SA20TPGI
Rohs Code
有
Operating Temperature-Max
85 °C
Access Time-Max
19 ns
Reflow Temperature-Max (s)
30
Operating Temperature-Min
-40 °C
Package Equivalence Code
DIP24,.3
Package Body Material
PLASTIC/EPOXY
Number of Words Code
2000
Package Style
IN-LINE
Package Description
DIP, DIP24,.3
JESD-609代码
e3
无铅代码
有
ECCN 代码
EAR99
端子表面处理
哑光锡
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
DUAL
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
2.54 mm
Reach合规守则
compliant
引脚数量
24
JESD-30代码
R-PDIP-T24
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
4.5 V
操作模式
ASYNCHRONOUS
电源电流-最大值
0.105 mA
组织结构
2KX8
输出特性
3-STATE
座位高度-最大
4.191 mm
内存宽度
8
待机电流-最大值
0.002 A
记忆密度
16384 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
4.5 V
长度
31.75 mm
宽度
7.62 mm
IDT6116SA20TPGI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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