Integrated Device Technology (IDT) IDT71V124SA12TYG8
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IDT71V124SA12TYG8
1179-IDT71V124SA12TYG8
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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32
1最小包装量--
IDT71V124SA12TYG8详情
Integrated Device Technology (IDT) IDT71V124SA12TYG8重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
32
Package Description
SOJ, SOJ32,.34
Package Style
小概要
Moisture Sensitivity Levels
3
Number of Words Code
128000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
SOJ32,.34
Reflow Temperature-Max (s)
30
Access Time-Max
12 ns
Operating Temperature-Max
70 °C
Rohs Code
有
Manufacturer Part Number
IDT71V124SA12TYG8
Number of Words
131072 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
SOJ
Package Shape
RECTANGULAR
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.33
Part Package Code
SOJ
JESD-609代码
e3
无铅代码
有
ECCN 代码
3A991.B.2.A
端子表面处理
Matte Tin (Sn) - annealed
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
DUAL
终端形式
J BEND
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
1.27 mm
Reach合规守则
compliant
引脚数量
32
JESD-30代码
R-PDSO-J32
资历状况
不合格
电源电压-最大值(Vsup)
3.6 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3 V
操作模式
ASYNCHRONOUS
电源电流-最大值
0.13 mA
组织结构
128KX8
输出特性
3-STATE
座位高度-最大
3.7592 mm
内存宽度
8
待机电流-最大值
0.01 A
记忆密度
1048576 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
3 V
宽度
7.62 mm
长度
20.955 mm
IDT71V124SA12TYG8拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。