Integrated Device Technology IDT70V25S35PFG
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IDT70V25S35PFG
1179-IDT70V25S35PFG
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Dual-Port SRAM, 8KX16, 35ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100
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IDT70V25S35PFG详情
Integrated Device Technology IDT70V25S35PFG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
100
Package Description
LFQFP, QFP100,.63SQ,20
Package Style
FLATPACK, LOW PROFILE, FINE PITCH
Moisture Sensitivity Levels
3
Number of Words Code
8000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
QFP100,.63SQ,20
Reflow Temperature-Max (s)
30
Access Time-Max
35 ns
Operating Temperature-Max
70 °C
Rohs Code
有
Manufacturer Part Number
IDT70V25S35PFG
Number of Words
8192 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
LFQFP
Package Shape
SQUARE
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.15
Part Package Code
QFP
JESD-609代码
e3
无铅代码
有
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn) - annealed
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.5 mm
Reach合规守则
compliant
引脚数量
100
JESD-30代码
S-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.6 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.18 mA
组织结构
8KX16
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
16
待机电流-最大值
0.005 A
记忆密度
131072 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
3 V
宽度
14 mm
长度
14 mm
IDT70V25S35PFG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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