Integrated Device Technology IDT71V3559S80BGI
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IDT71V3559S80BGI
1179-IDT71V3559S80BGI
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ZBT SRAM, 256KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
1最小包装量--
IDT71V3559S80BGI详情
Integrated Device Technology IDT71V3559S80BGI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
119
Package Description
BGA, BGA119,7X17,50
Package Style
网格排列
Moisture Sensitivity Levels
3
Number of Words Code
256000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
BGA119,7X17,50
Operating Temperature-Min
-40 °C
Reflow Temperature-Max (s)
20
Access Time-Max
8 ns
Operating Temperature-Max
85 °C
Rohs Code
无
Manufacturer Part Number
IDT71V3559S80BGI
Clock Frequency-Max (fCLK)
95 MHz
Number of Words
262144 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
BGA
Package Shape
RECTANGULAR
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.27
Part Package Code
BGA
JESD-609代码
e0
无铅代码
无
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn63Pb37)
附加功能
FLOW-THROUGH ARCHITECTURE
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
1.27 mm
Reach合规守则
not_compliant
引脚数量
119
JESD-30代码
R-PBGA-B119
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
电源
3.3 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.26 mA
组织结构
256KX18
输出特性
3-STATE
座位高度-最大
2.36 mm
内存宽度
18
待机电流-最大值
0.045 A
记忆密度
4718592 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
ZBT SRAM
待机电压-最小值
3.14 V
宽度
14 mm
长度
22 mm
IDT71V3559S80BGI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。