Integrated Device Technology IDT71V3578YS133PFG
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IDT71V3578YS133PFG
1179-IDT71V3578YS133PFG
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Cache SRAM, 256KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TQFP-100
1最小包装量--
IDT71V3578YS133PFG详情
Integrated Device Technology IDT71V3578YS133PFG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
100
Package Description
14 X 20 MM, ROHS COMPLIANT, PLASTIC, TQFP-100
Package Style
FLATPACK, LOW PROFILE
Moisture Sensitivity Levels
3
Number of Words Code
256000
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
30
Access Time-Max
4.2 ns
Operating Temperature-Max
70 °C
Rohs Code
有
Manufacturer Part Number
IDT71V3578YS133PFG
Number of Words
262144 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
LQFP
Package Shape
RECTANGULAR
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.74
Part Package Code
QFP
JESD-609代码
e3
ECCN 代码
3A991.B.2.A
端子表面处理
哑光锡
附加功能
流水线结构
HTS代码
8542.32.00.41
技术
CMOS
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.65 mm
Reach合规守则
compliant
引脚数量
100
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
组织结构
256KX18
座位高度-最大
1.6 mm
内存宽度
18
记忆密度
4718592 bit
并行/串行
PARALLEL
内存IC类型
缓存SRAM
宽度
14 mm
长度
20 mm
IDT71V3578YS133PFG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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