Integrated Device Technology IDT71V65803S133PFG
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IDT71V65803S133PFG
1179-IDT71V65803S133PFG
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ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100, PLASTIC, MO-136, TQFP-100
1最小包装量--
IDT71V65803S133PFG详情
Integrated Device Technology IDT71V65803S133PFG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
100
Package Description
LQFP, QFP100,.63X.87
Package Style
FLATPACK, LOW PROFILE
Moisture Sensitivity Levels
3
Number of Words Code
512000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
QFP100,.63X.87
Reflow Temperature-Max (s)
30
Access Time-Max
4.2 ns
Operating Temperature-Max
70 °C
Rohs Code
有
Manufacturer Part Number
IDT71V65803S133PFG
Clock Frequency-Max (fCLK)
133 MHz
Number of Words
524288 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
LQFP
Package Shape
RECTANGULAR
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.11
Part Package Code
QFP
JESD-609代码
e3
无铅代码
有
ECCN 代码
3A991.B.2.A
端子表面处理
Matte Tin (Sn) - annealed
附加功能
爆破计数器
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.65 mm
Reach合规守则
compliant
引脚数量
100
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.3 mA
组织结构
512KX18
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
18
待机电流-最大值
0.04 A
记忆密度
9437184 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
ZBT SRAM
待机电压-最小值
3.14 V
宽度
14 mm
长度
20 mm
IDT71V65803S133PFG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。