Integrated Device Technology (IDT) IDT70V3579S4BC
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IDT70V3579S4BC
1179-IDT70V3579S4BC
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Dual-Port SRAM, 32KX36, 4.2ns, PBGA256, BGA-256
1最小包装量--
IDT70V3579S4BC详情
Integrated Device Technology (IDT) IDT70V3579S4BC重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
256
Package Description
LBGA,
Package Style
GRID ARRAY, LOW PROFILE
Moisture Sensitivity Levels
3
Number of Words Code
32000
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
20
Access Time-Max
4.2 ns
Operating Temperature-Max
70 °C
Rohs Code
无
Manufacturer Part Number
IDT70V3579S4BC
Number of Words
32768 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
LBGA
Package Shape
SQUARE
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.14
Part Package Code
BGA
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn63Pb37)
附加功能
PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE
HTS代码
8542.32.00.41
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
1 mm
Reach合规守则
not_compliant
引脚数量
256
JESD-30代码
S-PBGA-B256
资历状况
不合格
电源电压-最大值(Vsup)
3.45 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.15 V
操作模式
SYNCHRONOUS
组织结构
32KX36
座位高度-最大
1.5 mm
内存宽度
36
记忆密度
1179648 bit
并行/串行
PARALLEL
内存IC类型
DUAL-PORT SRAM
宽度
17 mm
长度
17 mm
IDT70V3579S4BC拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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