Integrated Device Technology (IDT) IDT7133LA55FB
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IDT7133LA55FB
1179-IDT7133LA55FB
连接器,连接线
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Dual-Port SRAM, 2KX16, 55ns, CMOS, CQFP68, FP-68
1最小包装量--
IDT7133LA55FB详情
Integrated Device Technology (IDT) IDT7133LA55FB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
68
Package Description
QFF, QFL68,.95SQ
Package Style
FLATPACK
Number of Words Code
2000
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Part Package Code
QFP
Risk Rank
5.05
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Life Cycle Code
活跃
Manufacturer
Integrated Device Technology Inc
Package Shape
SQUARE
Package Code
QFF
Supply Voltage-Nom (Vsup)
5 V
Number of Words
2048 words
Manufacturer Part Number
IDT7133LA55FB
Rohs Code
无
Operating Temperature-Max
125 °C
Access Time-Max
55 ns
Reflow Temperature-Max (s)
20
Operating Temperature-Min
-55 °C
Package Equivalence Code
QFL68,.95SQ
Usage Level
Military grade
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A001.A.2.C
端子表面处理
Tin/Lead (Sn/Pb)
附加功能
AUTOMATIC POWER-DOWN
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
QUAD
终端形式
FLAT
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
1.27 mm
Reach合规守则
not_compliant
引脚数量
68
JESD-30代码
S-CQFP-F68
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
MILITARY
电源电压-最小值(Vsup)
4.5 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.285 mA
组织结构
2KX16
输出特性
3-STATE
座位高度-最大
3.683 mm
内存宽度
16
待机电流-最大值
0.004 A
记忆密度
32768 bit
筛选水平
MIL-PRF-38535
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
2 V
输出启用
YES
宽度
24.0792 mm
长度
24.0792 mm
IDT7133LA55FB拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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